Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon
dc.contributor.author | Lussier, Alexandre W. | |
dc.contributor.author | Bourbonnais Sureault, David | |
dc.contributor.author | Chicoine, Martin | |
dc.contributor.author | Martel, Richard | |
dc.contributor.author | Martinu, Ludvik | |
dc.contributor.author | Roorda, Sjoerd | |
dc.contributor.author | Schiettekatte, François | |
dc.date.accessioned | 2024-02-14T12:46:09Z | |
dc.date.available | NO_RESTRICTION | fr |
dc.date.available | 2024-02-14T12:46:09Z | |
dc.date.issued | 2024-02-09 | |
dc.identifier.uri | http://hdl.handle.net/1866/32571 | |
dc.publisher | American Institute of Physics | fr |
dc.subject | Signal-to-noise ratio | fr |
dc.subject | Amorphous materials | fr |
dc.subject | Materials heat treatment | fr |
dc.subject | Microstructural properties | fr |
dc.subject | Photolithography | fr |
dc.subject | Raman spectroscopy | fr |
dc.subject | Depth profiling techniques | fr |
dc.title | Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon | fr |
dc.type | Article | fr |
dc.contributor.affiliation | Université de Montréal. Faculté des arts et des sciences. Département de physique | fr |
dc.identifier.doi | 10.1063/5.0186959 | |
dcterms.abstract | We show that the micro-scale variations in the relaxation state of amorphous silicon (aSi) can be well-identified by Raman mapping over hundreds or thousands of µm2 in 1-2 hours. Pure and relaxed a-Si is obtained by self-implantation in crystalline silicon (c-Si) followed by an anneal at 500°C. It is then locally re-implanted over micro-sized patterns to produce unrelaxed aSi zones. Raman mappings are obtained by pointwise confocal µ-Raman and Hyperspectral Raman Imaging (RIMA). We also measure depth profiles of the relaxation state in re-implanted a-Si by scanning the edge of a re-implanted sample. We infer from the depth profiles that the minimal damage dose to fully de-relax a-Si is 0.04 displacements per atoms, which is an order of magnitude smaller than the fluence needed to fully amorphize c-Si. | fr |
dcterms.isPartOf | urn:ISSN:0021-8979 | fr |
dcterms.isPartOf | urn:ISSN:1089-7550 | fr |
dcterms.language | eng | fr |
UdeM.ReferenceFournieParDeposant | A. W. Lussier, D. Bourbonnais-Sureault, M. Chicoine, R. Martel, L. Martinu, S. Roorda, F. Schiettekatte; Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon. J. Appl. Phys. 135 (2024) 065301. https://doi.org/10.1063/5.0186959 | fr |
UdeM.VersionRioxx | Version acceptée / Accepted Manuscript | fr |
oaire.citationTitle | Journal of applied physics | fr |
oaire.citationVolume | 135 | fr |
oaire.citationIssue | 6 | fr |
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