Now showing items 1-10 of 20

  • Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon 

    Lussier, Alexandre W.; Bourbonnais Sureault, David; Chicoine, Martin; Martel, Richard; Martinu, Ludvik; Roorda, Sjoerd; Schiettekatte, François (American Institute of Physics, 2024-02-09)
    We show that the micro-scale variations in the relaxation state of amorphous silicon (aSi) can be well-identified by Raman mapping over hundreds or thousands of µm2 in 1-2 hours. Pure and relaxed a-Si is obtained by self-implantation in crystalline ...
  • Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon 

    Nélis, Adrien; Chicoine, Martin; Schiettekatte, François; Terwagne, Guy (Elsevier, 2023-02-27)
    Semiconductor nanocrystals incorporated in a dielectric film are widely studied as potential candidates to exceed the Shockley-Queisser theoretical conversion limit of photovoltaic cells. In this context, Ge nanocrystals embedded in SiO2 films seem to ...
  • Hydrogen analysis depth calibration by CORTEO Monte-Carlo simulation 

    Moser, M.; Reichart, P.; Bergmaier, A.; Greubel, C.; Schiettekatte, François; Dollinger, G. (Elsevier, 2015-10-21)
    Hydrogen imaging with sub-μm lateral resolution and sub-ppm sensitivity has become possible with coincident proton–proton (pp) scattering analysis (Reichart et al., 2004). Depth information is evaluated from the energy sum signal with respect to energy ...
  • Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions 

    Fekecs, André; Chicoine, Martin; Ilahi, Bouraoui; Spring Thorpe, Anthony J.; Schiettekatte, François; Morris, Denis; Charette, Paul G.; Arès, Richard (Elsevier, 2015-07-30)
    We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and ...
  • Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films 

    Aghdaei, Azin; Pandiyan, R.; Bouraoui, Ilahi; Chicoine, Martin; El Gowini, M.; Schiettekatte, François; Frechette, Luc G.; Morris, Denis (American Institute of Physics, 2020-12-22)
    We have investigated the impact of thermal annealing gaseous atmosphere of argon, nitrogen, and forming gas on the structural and optical properties of thin polycrystalline AlN films subjected to high-energy zirconium ions implantation. X-ray diffraction, ...
  • Polyphenol-peptide interactions in mitigation of Alzheimer’s disease : role of biosurface-induced aggregation 

    Gaudreault, Roger; Hervé, Vincent; Van De Ven, Theo; Mousseau, Normand; Ramassamy, Charles (IOS Press, 2021-05-08)
    Alzheimer’s disease (AD) is the most common age-related neurodegenerative disorder, responsible for nearly two-thirds of all dementia cases. In this review, we report the potential AD treatment strategies focusing on natural polyphenol molecules ...
  • Corilagin and 1,3,6-Tri-O-galloyl-β -D-glucose : potential inhibitors of SARS-CoV-2 variants 

    Binette, Vincent; Côté, Sébastien; Haddad, Mohamed; Nguyen, Phuong Trang; Bélanger, Sébastien; Bourgault, Steve; Ramassamy, Charles; Gaudreault, Roger; Mousseau, Normand (2021-06-28)
    The COVID-19 disease caused by the virus SARS-CoV-2, first detected in December 2019, is still emerging through virus mutations. Although almost under control in some countries due to effective vaccines that are mitigating the worldwide pandemic, the ...
  • Pressure effect on diffusion of carbon at the 85.91◦ 100 symmetric tilt grain boundary of α-iron 

    Rahman, Md Mijanur; El-Mellouhi, Fedwa; Bouhali, Othmane; Becquart, Charlotte; Mousseau, Normand (American Physical Society, 2021-04-19)
    The diffusion mechanism of carbon in iron plays a vital role in carburization processes, steel fabrication, and metal dusting corrosion. In this paper, using the kinetic activation-relaxation technique (k-ART), an off-lattice kinetic Monte Carlo algorithm ...
  • Diffusion mechanism of bound Schottky defect in magnesium oxide 

    Mahmoud, Sami; Carrez, Philippe; Landeiro Dos Reis, Marie; Mousseau, Normand; Cordier, Patrick (American Physical Society, 2021-03-25)
    In simple ionic crystals, intrinsic point defects must satisfy electrical neutrality and exist as Schottky defects. In magnesium oxide (MgO), a Schottky defect is then a combination of anionic and cationic vacancies. Since vacancies are charged, the ...
  • Molecular interactions of tannic acid with proteins associated with SARS-CoV-2 infectivity 

    Haddad, Mohamed; Gaudreault, Roger; Sasseville, Gabriel; Nguyen, Phuong Trang; Wiebe, Hannah; Van De Ven, Theo; Bourgault, Steve; Mousseau, Normand; Ramassamy, Charles (MDPI, 2022-02-27)
    The overall impact of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) on our society is unprecedented. The identification of small natural ligands that could prevent the entry and/or replication of the coronavirus remains a pertinent ...