À compter du 6 février, nous devrons procéder à une interruption temporaire du dépôt de documents dans Papyrus, y compris les thèses et mémoires, le temps d’effectuer une migration de la plateforme vers le service de dépôt institutionnel canadien Scholaris. Le jeudi 6 février, le site sera inaccessible à partir de 7h00 et il sera de retour en fin d’après-midi. Par la suite, tout le contenu de Papyrus sera accessible durant les travaux qui devraient durer environ deux semaines. Pour toute question, contactez depot@bib.umontreal.ca -------- As of February 6, we will be temporarily suspending the deposit of documents in Papyrus, including theses and dissertations, while we migrate the platform to the Canadian institutional deposit service Scholaris. On Thursday February 6, the site will be inaccessible from 7:00 a.m. until late afternoon. Afterwards, all Papyrus content will be accessible during the work, which is expected to last around two weeks. If you have any questions, please contact depot@bib.umontreal.ca
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Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon
(Elsevier, 2023-02-27)
Semiconductor nanocrystals incorporated in a dielectric film are widely studied as potential candidates to exceed the Shockley-Queisser theoretical conversion limit of photovoltaic cells. In this context, Ge nanocrystals ...
Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films
(American Institute of Physics, 2020-12-22)
We have investigated the impact of thermal annealing gaseous atmosphere of argon, nitrogen, and forming gas on the structural and optical properties of thin polycrystalline AlN films subjected to high-energy zirconium ions ...
Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon
(Elsevier, 2023-02-27)
Semiconductor nanocrystals incorporated in a dielectric film are widely studied as potential candidates to exceed the Shockley-Queisser theoretical conversion limit of photovoltaic cells. In this context, Ge nanocrystals ...
Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions
(Elsevier, 2015-07-30)
We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band ...