Now showing items 1-5 of 5
Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films
(American Institute of Physics, 2020-12-22)
We have investigated the impact of thermal annealing gaseous atmosphere of argon, nitrogen, and forming gas on the structural and optical properties of thin polycrystalline AlN films subjected to high-energy zirconium ions ...
Spectrum simulation of rough and nanostructured targets from their 2D and 3D image by Monte Carlo methods
Corteo is a program that implements Monte Carlo (MC) method to simulate ion beam analysis (IBA) spectra of several techniques by following the ions trajectory until a sufficiently large fraction of them reach the detector ...
Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions
We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band ...
Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon
Semiconductor nanocrystals incorporated in a dielectric film are widely studied as potential candidates to exceed the Shockley-Queisser theoretical conversion limit of photovoltaic cells. In this context, Ge nanocrystals ...
Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon
(American Institute of Physics, 2024-02-09)
We show that the micro-scale variations in the relaxation state of amorphous silicon (aSi) can be well-identified by Raman mapping over hundreds or thousands of µm2 in 1-2 hours. Pure and relaxed a-Si is obtained by ...