Now showing items 1-3 of 3

  • Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films 

    Aghdaei, Azin; Pandiyan, R.; Bouraoui, Ilahi; Chicoine, Martin; El Gowini, M.; Schiettekatte, François; Frechette, Luc G.; Morris, Denis (American Institute of Physics, 2020-12-22)
    We have investigated the impact of thermal annealing gaseous atmosphere of argon, nitrogen, and forming gas on the structural and optical properties of thin polycrystalline AlN films subjected to high-energy zirconium ions implantation. X-ray diffraction, ...
  • In-plasma analysis of plasma–surface interactions 

    Vinchon, Pierre; Asadollahi, Siavash; Coté, Claude; Marcet, Stephane; Atallah, S.; Dessureault, Émile; Chicoine, Martin; Sarkissian, Andranik; Leonelli, Richard; Roorda, Sjoerd; Schiettekatte, François; Stafford, Luc (American Institute of Physics, 2023)
    During deposition, modification, and etching of thin films and nanomaterials in reactive plasmas, many active species can interact with the sample simultaneously. This includes reactive neutrals formed by fragmentation of the feed gas, positive ions, ...
  • Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon 

    Lussier, Alexandre W.; Bourbonnais Sureault, David; Chicoine, Martin; Martel, Richard; Martinu, Ludvik; Roorda, Sjoerd; Schiettekatte, François (American Institute of Physics, 2024-02-09)
    We show that the micro-scale variations in the relaxation state of amorphous silicon (aSi) can be well-identified by Raman mapping over hundreds or thousands of µm2 in 1-2 hours. Pure and relaxed a-Si is obtained by self-implantation in crystalline ...