Browsing Faculté des arts et des sciences – Département de physique - Travaux et publications by Subject "Ion implantation"
Now showing items 1-4 of 4
-
Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions
(Elsevier, 2015-07-30)We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and ... -
Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films
(American Institute of Physics, 2020-12-22)We have investigated the impact of thermal annealing gaseous atmosphere of argon, nitrogen, and forming gas on the structural and optical properties of thin polycrystalline AlN films subjected to high-energy zirconium ions implantation. X-ray diffraction, ... -
Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon
(Elsevier, 2023-02-27)Semiconductor nanocrystals incorporated in a dielectric film are widely studied as potential candidates to exceed the Shockley-Queisser theoretical conversion limit of photovoltaic cells. In this context, Ge nanocrystals embedded in SiO2 films seem to ... -
Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon
(Elsevier, 2023-02-27)Semiconductor nanocrystals incorporated in a dielectric film are widely studied as potential candidates to exceed the Shockley-Queisser theoretical conversion limit of photovoltaic cells. In this context, Ge nanocrystals embedded in SiO2 films seem to ...