• Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions 

    Fekecs, André; Chicoine, Martin; Ilahi, Bouraoui; Spring Thorpe, Anthony J.; Schiettekatte, François; Morris, Denis; Charette, Paul G.; Arès, Richard (Elsevier, 2015-07-30)
    We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and ...
  • Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films 

    Aghdaei, Azin; Pandiyan, R.; Bouraoui, Ilahi; Chicoine, Martin; El Gowini, M.; Schiettekatte, François; Frechette, Luc G.; Morris, Denis (American Institute of Physics, 2020-12-22)
    We have investigated the impact of thermal annealing gaseous atmosphere of argon, nitrogen, and forming gas on the structural and optical properties of thin polycrystalline AlN films subjected to high-energy zirconium ions implantation. X-ray diffraction, ...