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  • Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions 

    Fekecs, André; Chicoine, Martin; Ilahi, Bouraoui; Spring Thorpe, Anthony J.; Schiettekatte, François; Morris, Denis; Charette, Paul G.; Arès, Richard (Elsevier, 2015-07-30)
    We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and ...