Lussier, Alexandre W.; Bourbonnais Sureault, David; Chicoine, Martin; Martel, Richard; Martinu, Ludvik; Roorda, Sjoerd; Schiettekatte, François (American Institute of Physics, 2024-02-09)
We show that the micro-scale variations in the relaxation state of amorphous silicon (aSi) can be well-identified by Raman mapping over hundreds or thousands of µm2 in 1-2 hours.
Pure and relaxed a-Si is obtained by self-implantation in crystalline ...