Now showing items 21-23 of 23

  • Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions 

    Fekecs, André; Chicoine, Martin; Ilahi, Bouraoui; Spring Thorpe, Anthony J.; Schiettekatte, François; Morris, Denis; Charette, Paul G.; Arès, Richard (Elsevier, 2015-07-30)
    We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and ...
  • Computer Simulation of Ion Beam Analysis: Possibilities and Limitations 

    Mayer, Matej; Eckstein, W.; Langhuth, H.; Schiettekatte, François; von Toussaint, U. (2011)
    Quantitative application of ion beam analysis methods, such as Rutherford backscat- tering, elastic recoil detection analysis, and nuclear reaction analysis, requires the use of computer simulation codes. The different types of available codes are pre- ...
  • Etude des instabilités d'interface du procédé de coextrusion 

    Carrier, Pierre (Ecole des Mines de Paris, 1994-06-01)
    Une étude expérimentale et numérique du procédé de coextrusion est abordée dans ce mémoire. On trouve essentiellement les étapes de la conception d'une filière de coextrusion comportant un hublot permettant d'observer l'écoulement en continu. L'expérience ...