Parcourir Faculté des arts et des sciences – Département de physique par sujet "Hall effect"
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Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions
(Elsevier, 2015-07-30)We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and ...