Influence des défauts ponctuels sur la relaxation du silicium amorphe
| dc.contributor.advisor | Lewis, Laurent J. | |
| dc.contributor.advisor | Roorda, Sjoerd | |
| dc.contributor.author | Dias, Cristiano Luis | |
| dc.date.accessioned | 2023-09-29T14:51:39Z | |
| dc.date.available | 2023-09-29T14:51:39Z | |
| dc.date.issued | 2002 | |
| dc.date.submitted | 2001 | |
| dc.identifier.uri | http://hdl.handle.net/1866/29610 | |
| dc.subject | Réseau aléatoire continu | |
| dc.subject | Approximation des liaisons fortes | |
| dc.subject | Dynamique moléculaire | |
| dc.subject | Lacune | |
| dc.subject | Interstitiel | |
| dc.subject | Coordination | |
| dc.subject | Volume de Voronoï | |
| dc.subject | Charge | |
| dc.subject | Lien pendant | |
| dc.title | Influence des défauts ponctuels sur la relaxation du silicium amorphe | |
| dc.type | Thèse ou mémoire / Thesis or Dissertation | |
| etd.degree.discipline | Physique | fr |
| etd.degree.grantor | Université de Montréal | fr |
| etd.degree.level | Maîtrise / Master's | |
| etd.degree.name | M. Sc. | |
| dcterms.description | Mémoire numérisé par la Direction des bibliothèques de l'Université de Montréal. | fr |
| dcterms.language | fra |
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