RSS 1.0Faculté des arts et des sciences – Département de physique - Travaux et publications
Cette collection accueille les publications savantes et d’autres types de travaux d’auteur.e.s associé.e.s à cette unité. Voir aussi la collection Thèses et mémoires de l'unité.
Recent Submissions
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In-plasma analysis of plasma–surface interactions
(American Institute of Physics, 2023)During deposition, modification, and etching of thin films and nanomaterials in reactive plasmas, many active species can interact with the sample simultaneously. This includes reactive neutrals formed by fragmentation of the feed gas, positive ions, ... -
Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon
(American Institute of Physics, 2024-02-09)We show that the micro-scale variations in the relaxation state of amorphous silicon (aSi) can be well-identified by Raman mapping over hundreds or thousands of µm2 in 1-2 hours. Pure and relaxed a-Si is obtained by self-implantation in crystalline ... -
Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon
(Elsevier, 2023-02-27)Semiconductor nanocrystals incorporated in a dielectric film are widely studied as potential candidates to exceed the Shockley-Queisser theoretical conversion limit of photovoltaic cells. In this context, Ge nanocrystals embedded in SiO2 films seem to ... -
Hydrogen analysis depth calibration by CORTEO Monte-Carlo simulation
(Elsevier, 2015-10-21)Hydrogen imaging with sub-μm lateral resolution and sub-ppm sensitivity has become possible with coincident proton–proton (pp) scattering analysis (Reichart et al., 2004). Depth information is evaluated from the energy sum signal with respect to energy ... -
Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions
(Elsevier, 2015-07-30)We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and ... -
Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films
(American Institute of Physics, 2020-12-22)We have investigated the impact of thermal annealing gaseous atmosphere of argon, nitrogen, and forming gas on the structural and optical properties of thin polycrystalline AlN films subjected to high-energy zirconium ions implantation. X-ray diffraction, ... -
Polyphenol-peptide interactions in mitigation of Alzheimer’s disease : role of biosurface-induced aggregation
(IOS Press, 2021-05-08)Alzheimer’s disease (AD) is the most common age-related neurodegenerative disorder, responsible for nearly two-thirds of all dementia cases. In this review, we report the potential AD treatment strategies focusing on natural polyphenol molecules ... -
Corilagin and 1,3,6-Tri-O-galloyl-β -D-glucose : potential inhibitors of SARS-CoV-2 variants
(2021-06-28)The COVID-19 disease caused by the virus SARS-CoV-2, first detected in December 2019, is still emerging through virus mutations. Although almost under control in some countries due to effective vaccines that are mitigating the worldwide pandemic, the ... -
Pressure effect on diffusion of carbon at the 85.91◦ 100 symmetric tilt grain boundary of α-iron
(American Physical Society, 2021-04-19)The diffusion mechanism of carbon in iron plays a vital role in carburization processes, steel fabrication, and metal dusting corrosion. In this paper, using the kinetic activation-relaxation technique (k-ART), an off-lattice kinetic Monte Carlo algorithm ... -
Diffusion mechanism of bound Schottky defect in magnesium oxide
(American Physical Society, 2021-03-25)In simple ionic crystals, intrinsic point defects must satisfy electrical neutrality and exist as Schottky defects. In magnesium oxide (MgO), a Schottky defect is then a combination of anionic and cationic vacancies. Since vacancies are charged, the ...
