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dc.contributor.authorFekecs, André
dc.contributor.authorChicoine, Martin
dc.contributor.authorIlahi, Bouraoui
dc.contributor.authorSpring Thorpe, Anthony J.
dc.contributor.authorSchiettekatte, François
dc.contributor.authorMorris, Denis
dc.contributor.authorCharette, Paul G.
dc.contributor.authorArès, Richard
dc.date.accessioned2022-12-22T17:17:47Z
dc.date.availableNO_RESTRICTIONfr
dc.date.available2022-12-22T17:17:47Z
dc.date.issued2015-07-30
dc.identifier.urihttp://hdl.handle.net/1866/27304
dc.publisherElsevierfr
dc.subjectIII–V semiconductorsfr
dc.subjectIon implantationfr
dc.subjectPrimary and secondary defectsfr
dc.subjectHall effectfr
dc.subjectX-ray diffractionfr
dc.titleCritical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ionsfr
dc.typeArticlefr
dc.contributor.affiliationUniversité de Montréal. Faculté des arts et des sciences. Département de physiquefr
dc.identifier.doi10.1016/j.nimb.2015.07.045
dcterms.abstractWe report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and 1.57 μm, were processed by ion implantation sequences done at multiple MeV energies and high fluence (1015 cm−2). The optimization of the fabrication process was closely related to the implantation temperature which influences the type of implant-induced defect structures. With hot implantation temperatures, at 373 K and 473 K, X-ray diffraction (XRD) revealed that dynamic defect annealing was strong and prevented the amorphization of the InGaAsP layers. These hot-implanted layers were less resistive and RTA could not optimize them systematically in favor of high resistivity. With cold implantation temperatures, at 83 K and even at 300 K, dynamic annealing was minimized. Damage clusters could form and accumulate to produce resistive amorphous-like structures. After recrystallization by RTA, polycrystalline signatures were found on every low-temperature Fe- and Ga-implanted structures. For both ion species, electrical parameters evolved similarly against annealing temperatures, and resistive structures were produced near 500 °C. However, better isolation was obtained with Fe implantation. Differences in sheet resistivities between the two alloy compositions were less than band gap-related effects. These observations, related to damage accumulation and recovery mechanisms, have important implications for the realization ion-implanted resistive layers that can be triggered with near infrared laser pulses and suitable for ultrafast optoelectronics.fr
dcterms.isPartOfurn:ISSN:0168-583Xfr
dcterms.isPartOfurn:ISSN:1872-9584fr
dcterms.languageengfr
UdeM.ReferenceFournieParDeposanthttps://doi.org/10.1016/j.nimb.2015.07.045fr
UdeM.VersionRioxxVersion originale de l'auteur / Author's Originalfr
oaire.citationTitleNuclear instruments and methods in physics research section Bfr
oaire.citationVolume359fr
oaire.citationStartPage99fr
oaire.citationEndPage106fr


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