Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions
dc.contributor.author | Fekecs, André | |
dc.contributor.author | Chicoine, Martin | |
dc.contributor.author | Ilahi, Bouraoui | |
dc.contributor.author | Spring Thorpe, Anthony J. | |
dc.contributor.author | Schiettekatte, François | |
dc.contributor.author | Morris, Denis | |
dc.contributor.author | Charette, Paul G. | |
dc.contributor.author | Arès, Richard | |
dc.date.accessioned | 2022-12-22T17:17:47Z | |
dc.date.available | NO_RESTRICTION | fr |
dc.date.available | 2022-12-22T17:17:47Z | |
dc.date.issued | 2015-07-30 | |
dc.identifier.uri | http://hdl.handle.net/1866/27304 | |
dc.publisher | Elsevier | fr |
dc.subject | III–V semiconductors | fr |
dc.subject | Ion implantation | fr |
dc.subject | Primary and secondary defects | fr |
dc.subject | Hall effect | fr |
dc.subject | X-ray diffraction | fr |
dc.title | Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions | fr |
dc.type | Article | fr |
dc.contributor.affiliation | Université de Montréal. Faculté des arts et des sciences. Département de physique | fr |
dc.identifier.doi | 10.1016/j.nimb.2015.07.045 | |
dcterms.abstract | We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and 1.57 μm, were processed by ion implantation sequences done at multiple MeV energies and high fluence (1015 cm−2). The optimization of the fabrication process was closely related to the implantation temperature which influences the type of implant-induced defect structures. With hot implantation temperatures, at 373 K and 473 K, X-ray diffraction (XRD) revealed that dynamic defect annealing was strong and prevented the amorphization of the InGaAsP layers. These hot-implanted layers were less resistive and RTA could not optimize them systematically in favor of high resistivity. With cold implantation temperatures, at 83 K and even at 300 K, dynamic annealing was minimized. Damage clusters could form and accumulate to produce resistive amorphous-like structures. After recrystallization by RTA, polycrystalline signatures were found on every low-temperature Fe- and Ga-implanted structures. For both ion species, electrical parameters evolved similarly against annealing temperatures, and resistive structures were produced near 500 °C. However, better isolation was obtained with Fe implantation. Differences in sheet resistivities between the two alloy compositions were less than band gap-related effects. These observations, related to damage accumulation and recovery mechanisms, have important implications for the realization ion-implanted resistive layers that can be triggered with near infrared laser pulses and suitable for ultrafast optoelectronics. | fr |
dcterms.isPartOf | urn:ISSN:0168-583X | fr |
dcterms.isPartOf | urn:ISSN:1872-9584 | fr |
dcterms.language | eng | fr |
UdeM.ReferenceFournieParDeposant | https://doi.org/10.1016/j.nimb.2015.07.045 | fr |
UdeM.VersionRioxx | Version originale de l'auteur / Author's Original | fr |
oaire.citationTitle | Nuclear instruments and methods in physics research section B | fr |
oaire.citationVolume | 359 | fr |
oaire.citationStartPage | 99 | fr |
oaire.citationEndPage | 106 | fr |
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